DCT

1:26-cv-00818

Wolfspeed Inc v. Navitas Semiconductor Corp

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I. Executive Summary and Procedural Information

  • Parties & Counsel:
  • Case Identification: 1:26-cv-00818, D. Del., 07/07/2026
  • Venue Allegations: Venue is alleged to be proper in the District of Delaware because all Defendant entities are incorporated or organized under the laws of Delaware and therefore reside in the District.
  • Core Dispute: Plaintiff alleges that Defendant's silicon carbide (SiC) and gallium nitride (GaN) based semiconductor products infringe five U.S. patents related to power module packaging, semiconductor device structure, and manufacturing methods.
  • Technical Context: The lawsuit concerns wide bandgap semiconductors, a class of materials enabling more efficient high-power and high-frequency electronics than traditional silicon, with applications in electric vehicles, data centers, and renewable energy systems.
  • Key Procedural History: The complaint notes that prior to filing, Plaintiff sent Defendant two letters, on April 10, 2026, and May 11, 2026, the second of which allegedly included claim charts identifying the asserted patents and the accused products, putting Defendant on notice of the alleged infringement.

Case Timeline

Date Event
2006-11-21 Earliest Priority Date for '005 Patent
2012-05-01 '005 Patent Issued
2012-12-28 Earliest Priority Date for '396 Patent
2015-03-16 Earliest Priority Date for '392 Patent
2017-01-13 Earliest Priority Date for '443 Patent
2019-05-16 Earliest Priority Date for '418 Patent
2020-08-18 '443 Patent Issued
2021-01-05 '396 Patent Issued
2021-05-04 '418 Patent Issued
2024-01-30 '392 Patent Issued
2026-04-10 Plaintiff sends first letter to Defendant alleging infringement
2026-04-23 Defendant responds to Plaintiff's first letter
2026-05-11 Plaintiff sends second letter with claim charts to Defendant
2026-07-07 Complaint Filed

II. Technology and Patent(s)-in-Suit Analysis

U.S. Patent No. 10,749,443 - "High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices"

  • Issued: August 18, 2020

The Invention Explained

  • Problem Addressed: The patent's background describes how parasitic impedances, particularly loop inductance, in conventional power modules limit the switching speed of advanced wide bandgap semiconductor devices like SiC, causing voltage overshoots, ringing, and increased switching losses '443 Patent, col. 1:41-49
  • The Patented Solution: The invention is a power module structure with a multi-level, layered arrangement of conductors and "terraced" power terminals at different elevations '443 Patent, col. 7:54-61 '443 Patent, Fig. 13 This configuration simplifies connection to an external busbar system and creates overlapping current paths that flow in opposite directions, which enables flux cancellation to significantly reduce loop inductance '443 Patent, abstract '443 Patent, col. 13:1-10
  • Technical Importance: This module packaging technology enables the high-speed switching potential of SiC and other wide bandgap devices to be realized in high-power applications by minimizing the parasitic inductance that traditionally limits performance Compl. ¶19

Key Claims at a Glance

  • The complaint asserts at least Claim 27 Compl. Ex. 6
  • Independent Claim 27 is for a power module comprising:
    • at least one power substrate;
    • a housing arranged on the at least one power substrate;
    • a first terminal electrically connected to the at least one power substrate;
    • a second terminal;
    • a third terminal electrically connected to the at least one power substrate;
    • a plurality of power devices electrically connected to the at least one power substrate;
    • wherein the power module is structured, arranged, and configured to reduce inductance, and wherein the inductance comprises a total stray inductance value of a critical power switching loop of the power module that comprises a range of 12 (nH) to 2 (nH).

U.S. Patent No. 11,888,392 - "High Speed, Efficient SiC Power Module"

  • Issued: January 30, 2024

The Invention Explained

  • Problem Addressed: Conventional power modules using silicon (Si) switching components suffer from poor thermal dissipation, structural integrity issues, and high parasitic inductance, which limits their efficiency and power density, particularly at high switching frequencies '392 Patent, col. 1:26-48
  • The Patented Solution: The patent describes a power converter module that is "devoid of a baseplate" and instead uses an Active Metal Braze (AMB) substrate with an aluminum nitride base layer '392 Patent, abstract This AMB substrate provides both electrical connections for SiC switching components and superior thermal conductivity for heat dissipation, improving performance and structural integrity without a separate, bulky metal baseplate '392 Patent, col. 2:42-53
  • Technical Importance: This design improves the thermal management and power density of SiC power modules, making them more efficient and compact for demanding applications Compl. ¶22

Key Claims at a Glance

  • The complaint asserts at least Claim 1 Compl. Ex. 7
  • Independent Claim 1 is for a power converter module comprising:
    • a housing;
    • a substrate within the housing, the substrate comprising a base layer and a conductive layer on a surface of the base layer;
    • power converter circuitry on the substrate and comprising at least two silicon carbide switching components coupled to one another via the conductive layer;
    • wherein the power converter module is devoid of a baseplate.

U.S. Patent No. 8,169,005 - "High Voltage GaN Transistors"

  • Issued: May 1, 2012
  • Technology Synopsis: The patent addresses the challenge of achieving high blocking voltages in Gallium Nitride (GaN) transistors while maintaining low on-resistance for high current flow Compl. ¶25 The invention proposes a transistor structure incorporating multiple conductive "field plates" separated by specific spacer layers, which helps to shape the electric field and enhance power switching performance in high-frequency, high-power applications '005 Patent, abstract
  • Asserted Claims: Claim 15 (independent) Compl. Ex. 8
  • Accused Features: The complaint alleges that Navitas's GaNFast®, GaNSlim™, GaNSafe®, and GaN FET products infringe the '005 Patent Compl. ¶55

U.S. Patent No. 10,998,418 - "Power Semiconductor Devices Having Reflowed Inter-Metal Dielectric Layers"

  • Issued: May 4, 2021
  • Technology Synopsis: The invention is directed to improving the structure and performance of wide bandgap semiconductor devices like SiC MOSFETs Compl. ¶28 It describes a multi-layer inter-metal dielectric (IMD) pattern that includes both a "reflowed" dielectric material pattern and a "non-reflowable" dielectric material pattern, which is designed to create improved shapes and performance characteristics for the insulating layers within the device '418 Patent, abstract
  • Asserted Claims: Claim 1 (independent) Compl. Ex. 9
  • Accused Features: The complaint accuses Navitas's GeneSiC™ MOSFET products and the SiCPAK™ Module products that incorporate those MOSFETs Compl. ¶62

U.S. Patent No. 10,886,396 - "Transistor Structures Having a Deep Recessed P+ Junction and Methods for Making Same"

  • Issued: January 5, 2021
  • Technology Synopsis: This patent aims to improve the reliability of transistor devices by reducing the high electrical field on the gate oxide, a common failure point Compl. ¶31 The solution is a transistor structure featuring a "deep recessed P+ junction" below the source region, which extends from the well region and forms a trench on the device's upper surface, a design intended to mitigate electric field stress and enhance reliability '396 Patent, abstract
  • Asserted Claims: Claim 17 (independent) Compl. Ex. 10
  • Accused Features: The complaint targets Navitas's GeneSiC™ MOSFET products and the SiCPAK™ Module products incorporating them Compl. ¶69

III. The Accused Instrumentality

Product Identification

  • The complaint identifies two main categories of accused products: GaN-based devices and SiC-based devices Compl. ¶33
    • GaN-based products include Navitas's GaNFast® (e.g., models NV6115 and NV6512C), GaNSlim™, GaNSafe®, and GaN FET product lines.
    • SiC-based products include Navitas's GeneSiC™ MOSFET products (e.g., models G3F18MT12K, G3R30MT12K) and SiCPAK™ Module products (e.g., model G3F09MT12FB2).

Functionality and Market Context

  • The Accused Products are wide bandgap power semiconductors designed for high-temperature, high-voltage, and high-frequency power applications Compl. ¶13 The complaint alleges these products are used in markets such as defense, AI data centers, motor drives, power supplies, and transportation Compl. ¶14 Navitas is alleged to market and sell these products through its website and third-party distributors to customers in the United States Compl. ¶34 A datasheet for the accused SiCPAK™ Module G3F09MT12FB2, included as part of an infringement chart, describes it as a "1200V 9.3mΩ Half-Bridge SiC Module" for applications including EV chargers, solar inverters, and motor drives Compl. Ex. 6, p. 3

IV. Analysis of Infringement Allegations

The complaint references preliminary claim charts attached as exhibits, which are incorporated by reference Compl. ¶42 Compl. ¶49 The infringement allegations for the lead patents are summarized below.

'443 Patent Infringement Allegations

Claim Element (from Independent Claim 27) Alleged Infringing Functionality Complaint Citation Patent Citation
A power module, comprising: The Navitas SiCPAK™ Module G3F09MT12FB2 is alleged to be a power module, specifically a Half-Bridge SiC Module. Ex. 6, p. 2 col. 5:12-15
at least one power substrate; The accused module is alleged to have at least one power substrate. Ex. 6, p. 3 col. 9:66-10:2
a housing arranged on the at least one power substrate; The accused module has a housing arranged on its power substrate. A photograph points to this housing. (Compl. Ex. 6, p. 4). Ex. 6, p. 4 col. 11:28-36
a first terminal electrically connected to the at least one power substrate; The accused module has a first terminal connected to the power substrate. Ex. 6, p. 4 col. 8:19-24
a second terminal; The accused module has a second terminal. Ex. 6, p. 5 col. 8:19-24
a third terminal electrically connected to the at least one power substrate; The accused module has a third terminal connected to the power substrate. Ex. 6, p. 6 col. 8:19-24
a plurality of power devices electrically connected to the at least one power substrate, The accused module has multiple power devices connected to the power substrate. Ex. 6, p. 7 col. 10:60-65
wherein the power module is structured, arranged, and configured to reduce inductance, and wherein the inductance comprises a total stray inductance value of a critical power switching loop of the power module that comprises a range of 12 (nH) to 2 (nH). The accused module is alleged to be structured to reduce inductance, with an asserted total stray inductance value of 7.43 nH. A diagram shows the measurement. Compl. Ex. 6, p. 8 Ex. 6, p. 8 col. 13:1-10

'392 Patent Infringement Allegations

Claim Element (from Independent Claim 1) Alleged Infringing Functionality Complaint Citation Patent Citation
A power converter module comprising: The Navitas SiCPAK™ Module G3F09MT12FB2 is alleged to be a power converter module, specifically a Half-Bridge SiC Module. Ex. 7, p. 2 col. 2:2-5
a housing; The accused module has a housing. A photograph of the module's exterior is provided as evidence. (Compl. Ex. 7, p. 3). Ex. 7, p. 3 col. 2:37-40
a substrate within the housing, the substrate comprising a base layer and a conductive layer on a surface of the base layer; and The accused module allegedly has a substrate within the housing, which comprises a base layer and a conductive layer. A photograph with colored arrows points to these alleged layers. (Compl. Ex. 7, p. 4). Ex. 7, p. 4 col. 1:53-61
power converter circuitry on the substrate and comprising at least two silicon carbide switching components coupled to one another via the conductive layer; The accused module allegedly has power converter circuitry on the substrate with at least two SiC switching components coupled via the conductive layer. An annotated internal view is provided. Compl. Ex. 7, p. 5 Ex. 7, p. 4 col. 2:7-14
wherein the power converter module is devoid of a baseplate. The accused module is alleged to be devoid of a baseplate. A photograph points to the bottom of the module to support this allegation. Compl. Ex. 7, p. 5 Ex. 7, p. 5 col. 2:42-45

Identified Points of Contention

  • Quantitative Infringement ('443 Patent): The final limitation of Claim 27 requires the power module's "total stray inductance value" to fall within a specific numerical range ("12 (nH) to 2 (nH)"). While the complaint provides a value of 7.43 nH from a datasheet Compl. Ex. 6, p. 8, a central point of contention may be the methodology and conditions under which this value was measured and whether it accurately represents the product's performance under all operating conditions relevant to the patent.
  • Structural Identity ('392 Patent): A key dispute for the '392 patent will likely center on the negative limitation "devoid of a baseplate." The definition of "baseplate" will be critical. Navitas may argue that a structural layer of its module, even if not explicitly called a baseplate, performs the same function and thus the accused product is not "devoid" of one. The complaint supports its allegation with a photograph indicating the absence of a distinct component Compl. Ex. 7, p. 5, framing this as a structural rather than purely functional question.
  • Micro-Structural Mapping ('418, '396, '005 Patents): For the patents directed at specific semiconductor structures, infringement will depend on a microscopic comparison. For instance, with the '418 patent, a key question will be whether the accused GeneSiC™ MOSFETs actually contain both a "reflowed" and a "non-reflowable" dielectric material pattern as claimed. The complaint uses a color-annotated micrograph to allege this structure exists Compl. Ex. 9, p. 6, but the case may turn on expert analysis of the device's actual composition and fabrication process.

V. Key Claim Terms for Construction

  • For the '443 Patent:

    • The Term: "a total stray inductance value ... that comprises a range of 12 (nH) to 2 (nH)" (Claim 27)
    • Context and Importance: This term is a quantitative limitation that defines a required performance characteristic of the module's "critical power switching loop." Infringement of this element is not a matter of structural presence but of measured performance. The case will depend on whether the accused products are proven to operate within this specific numerical range.
    • Intrinsic Evidence for Interpretation:
      • Evidence for a Broader Interpretation: The patent repeatedly emphasizes the general goal of reducing inductance throughout the specification, suggesting the numerical range is an example of achieving this goal '443 Patent, col. 5:1-11 Parties might argue the claim covers any module structured to achieve low inductance that happens to fall in this range.
      • Evidence for a Narrower Interpretation: The specification provides detailed descriptions and figures of specific multi-layer layouts and terraced terminals as the means to achieve low inductance '443 Patent, Figs. 11-14 A party may argue that the claimed range is not just a result but is tied to the specific structures disclosed, such as the "uncomplicated laminated buss bars requiring no bends" '443 Patent, col. 8:29-32

  • For the '392 Patent:

    • The Term: "devoid of a baseplate" (Claim 1)
    • Context and Importance: This negative limitation is central to the infringement analysis. If any component of the accused module is construed by the court to be a "baseplate," infringement of this claim will be defeated.
    • Intrinsic Evidence for Interpretation:
      • Evidence for a Broader Interpretation (favoring infringement): The abstract and summary contrast the invention's AMB substrate with conventional designs that use a separate baseplate for structural support and thermal management '392 Patent, abstract This may support an interpretation that "baseplate" refers to a distinct, separate component, which the accused product allegedly lacks.
      • Evidence for a Narrower Interpretation (favoring non-infringement): The patent describes the claimed "substrate" as comprising a "base layer" '392 Patent, Claim 1 A defendant could argue that this "base layer" of the AMB substrate is functionally and structurally equivalent to a "baseplate," even if it is integrated into the substrate assembly, and therefore the module is not "devoid" of one.

VI. Other Allegations

  • Indirect Infringement: The complaint alleges that Navitas induces infringement by marketing, selling, and providing "instructions, user manuals, application notes, technical documentation, advertising, and marketing materials" that facilitate, direct, and encourage end users to use the Accused Products in an infringing manner Compl. ¶43 Compl. ¶50 Compl. ¶57 Compl. ¶64 Compl. ¶71
  • Willful Infringement: Willfulness is alleged based on Navitas's purported knowledge of the Asserted Patents prior to the lawsuit Compl. ¶44 Compl. ¶51 Compl. ¶58 Compl. ¶65 Compl. ¶72 This knowledge is specifically tied to pre-suit correspondence, including a May 11, 2026 letter from Wolfspeed that allegedly provided claim charts identifying the infringement Compl. ¶¶37-39

VII. Analyst's Conclusion: Key Questions for the Case

  1. A Definitional Question of Absence: The dispute over the '392 patent will likely hinge on the claim construction of the negative limitation "devoid of a baseplate." Will the court define "baseplate" as a distinct, separate component, which Navitas's modules may lack, or can the integrated "base layer" of Navitas's AMB substrate be considered a "baseplate," thereby avoiding infringement?

  2. An Evidentiary Question of Measurement: Infringement of the '443 patent's Claim 27 turns on a quantitative factual question: do the accused SiCPAK™ modules possess a "total stray inductance value" within the claimed range of 2 to 12 nH? This will likely evolve into a battle of expert testing and measurement methodologies to determine if the accused products meet this specific performance metric.

  3. A Technical Question of Micro-Structure: For the patents concerning device-level architecture (e.g., '418, '396, '005), the core issue will be one of structural identity at the microscopic level. Does the physical composition of Navitas's commercial devices-including the specific arrangement of dielectric layers, P+ junctions, and field plates-map onto the precise structures required by the claims, or are there material differences in fabrication and design that place them outside the patents' scope?

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